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DRDO's SSPL Develops SiC Wafers and GaN HEMT-Based MMIC Technology.

Science and Technology | Dated: 25 Nov 2024

New Delhi (Delhi) based Solid State Physics Laboratory (SSPL), a Defence Research and Development Organisation (DRDO) unit, has developed indigenous technologies for manufacturing Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTS), along with Monolithic Microwave Integrated Circuits (MMICs).

🎯 Key Highlights:

  • - These advancements are crucial for next-generation defense systems, aerospace, and clean energy sectors.
  • - The 4-inch SiC wafers enable high-efficiency power electronics, while GaN HEMTs (up to 150 watt(W)) are essential for high-frequency and high-power applications like radars and electronic warfare.

💡 Other Important Facts:

  • (i) The MMIC, capable of 40W for X-band frequencies, supports microwave communication and satellite systems.
  • (ii) These technologies offer improved efficiency, reduced size, and enhanced performance, making them vital for military systems, 5G/satellite communications, and renewable energy applications.
  • (iii) Gallium Arsenide Technology Enabling Centre (GAETEC) facility in Hyderabad (Telangana) has successfully initiated limited production of GaN/SiC MMICS, contributing to India's self-reliance in semiconductor technology, aligning with the 'Atma Nirbhar' Bharat initiative.

📚 Test Your Knowledge:

Which DRDO unit recently developed SiC wafers and GaN HEMT-based MMIC technology?

Correct Answer: SSPL

🚀 Quick Recap:

About DRDO

  • Chairman: Sameer V. Kamat
  • Headquarters: New Delhi